- Ultrasmall package 200 mA CMOS-LDO (Single): TCR4SxxWBG Series
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- 31 Aug, 2010
- Requiring only a 0.63 mm2 mounting area, this product is ideal for applications requiring high-density packaging such as mobile phones. The voltage-clamp type output voltage can be set between 1.2 V and 3.6 V in increments of 50mV.
- A Switching IC that Changes between USB 2.0 High Speed (HS) Signals, Audio Signals, and UART Signals: TCUA231WBG
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- 31 Aug, 2010
- The TCUA231WBG is a Dual SP3T switching IC that can change between USB 2.0 signals, audio signals, and UART signals.
- Intelligent power device: TPD7211F
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- 31 Aug, 2010
- We have developed the half-bridge power MOSFET gate driver TPD7211F enveloped in the small PS-8 package to be used for motor driven products used when a p-channel power MOSFET is used on the high side.
- 31 Aug, 2010
- Toshiba launches 24nm process NAND flash memory
- 30 Jul, 2010
- RF ICs for Specified and Extremely Low-Power Radio Applications was released.
- 22 Jul, 2010
- Samsung and Toshiba to Support New Standardized NAND Specification for High-performance Applications
- 14 Jul, 2010
- Toshiba Starts Construction of Fab 5 for NAND Flash Memory at Yokkaichi
- 22 Jun, 2010
- Toshiba and Trek Establish Forum to Promote SD Cards Embedding Wireless Communication Functions
- 17 Jun, 2010
- Toshiba Launches Industry's Largest Embedded NAND Flash Memory Modules
- 14 Jun, 2010
- Applications: Automotive was updated.
- 21 Apr, 2010
- Key Technology"BiCD-0.13/CD-0.13 Analog Power Process Platform" information was released.